PNDs therefore do not require dielectric materials, or conductive contacts for source, drain and gate. Eliminating the conventional multi-layer material stack also eliminates the registration issues of aligning successive material or process steps while dealing with a flexible substrate. This allows aggressive downscaling of PND feature sizes, resulting in both dramatically reduced circuit footprint and significantly increased performance.
The aim of this student project is to realize high performing PNDs using low-temperature IGZO semiconductor on polyester substrates.
Your tasks and responsibilities include:
The aim of this student project is to realize high performing PNDs using low-temperature IGZO semiconductor on polyester substrates. Your tasks and responsibilities will include:
- Literature research to provide you with the required theoretical background about this new device.
- To deposit IGZO films and characterization of its electrical properties, such as free charge carrier density.
- To develop a nano-embossing patterning process to define the asymmetric semiconductor channel with sizes down to 50 nm.
- Electrical characterization of the PNDs with different dimensions.
- Participate in group meetings, provide feed-back, discuss results, and propose solutions to various challenging aspects.
- Give presentations and write a report on the project.
You are an ambitious Masters student from materials science, nanotechnology or physics with both scientific and practical skills. You have good communication skills in English and you are independent but also a team player.
For all inquiries, please contact:
For more information contact: Gerwin Gelinck Mail: Gerwin.Gelinck@tno.nl